sot-23 plastic-encapsulate transistors 2SC5343 transistor (npn) features z excellent h fe linearity z low noise maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma i b base current -continuous 50 ma p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe(1) v ce =6v,i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.1 0.25 v transition frequency f t v ce =10v,i c =1ma 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf noise figure nf v ce =6v,i c =0.1ma, f=1 k h z ,rg=10 k ? 10 db classification of h fe rank o y g l range 70-140 120-240 200-400 300-700 sot-23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.1 1 10 5 10 15 1 10 100 10 100 1000 0.1 1 10 100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 0 100 200 300 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 f=1mhz i e =0 / i c =0 t a =25 o c 2SC5343 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 20 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 o c i c f t ?? 150 v ce =6v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 150 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? 150 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 10ua 9ua 8ua 7ua 6ua 5ua 4ua 3ua 2ua i b =1ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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